廬
STTH302
HIGH EFFICIENCY ULTRAFAST DIODE
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
Tj (max)
V
F
(max)
trr (max)
3A
200 V
175 擄C
0.75 V
35 ns
FEATURES AND BENEFITS
Very low conduction losses
Negligible switching losses
Low forward and reverse recovery times
High junction temperature
s
s
s
s
DESCRIPTION
The STTH302 which is using ST's new 200V
planar technology, is specially suited for switching
mode base drive & transistor circuits.
The device is also intended for use as a free
wheeling diode in power supplies and other power
switching applications.
ABSOLUTE RATINGS
(limiting values)
Symbol
V
RRM
I
F (AV)
I
FSM
T
stg
Tj
Parameter
Repetitive peak reverse voltage
Average forward current
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
TI = 107擄C
t
p
= 10ms
DO-201AD
STTH302
Value
200
未
= 0.5
Sinusoidal
3
130
- 65 to + 175
175
Unit
V
A
A
擄C
擄C
THERMAL PARAMETERS
Symbol
Rth (j-a)
Junction-ambient*
Parameter
Value
25
Unit
擄C/W
* On infinite heatsink with 10mm lead length.
November 2001 - Ed: 1A
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