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ULTRA-FAST HIGH VOLTAGE DIODE
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
t
rr
(typ)
V
F
(max)
25A
1200V
60ns
1.9V
K1
A1
K2
A1
K2
A2
A2
K1
STTA5012TV1
STTA5012TV2
FEATURES AND BENEFITS
ULTRA-FAST, SOFT RECOVERY.
VERY LOW OVERALL POWER LOSSES IN
BOTH THE DIODE AND THE COMPANION
TRANSISTOR.
HIGH FREQUENCY AND/OR HIGH PULSED
CURRENT OPERATION.
HIGH REVERSE VOLTAGE CAPABILITY.
LOW INDUCTANCE PACKAGE < 5 nH.
INSULATED PACKAGE : ISOTOP
TM
Electrical insulation : 2500V
RMS
Capacitance : < 45pF.
K
ISOTOP
TM
A
K
SOD93
STTA2512P
DESCRIPTION
TURBOSWITCH 1200V drastically cuts losses in
all high voltage operationswhich require extremely
fast, soft and noise-free power diodes. Due to their
optimized switching performances they also highly
decrease power losses in any associated
switching IGBT or MOSFET in all freewheel mode
ABSOLUTE RATINGS
(limiting values, per diode)
Symbol
V
RRM
I
F(RMS)
I
FRM
I
FSM
T
stg
T
j
Parameter
Repetitive peak reverse voltage
RMS forward current
Repetitive peak forward current
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
tp = 5
碌s
F = 5kHz square
tp = 10ms sinusoidal
Value
1200
50
300
210
- 65 to + 150
150
Unit
V
A
A
A
擄C
擄C
operations.
They are particularly suitable in Motor Control
circuitries, or in the primary of SMPS as snubber,
clamping or demagnetizing diodes. They are also
suitable for secondary of SMPS as high voltage
rectifier diodes.
ISOTOP and TURBOSWITCH are trademarks of STMicroelectronics.
November 1999 - Ed: 4B
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