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廬

STT818B

HIGH GAIN LOW VOLTAGE

PNP POWER TRANSISTOR

Type

STT818B

s

Marking

818B

s

s

s

VERY LOW COLLECTOR TO EMITTER

SATURATION VOLTAGE

DC CURRENT GAIN > 100 (h

FE

)

3 A CONTINUOUS COLLECTOR CURRENT

(I

C

)

SURFACE-MOUNTING SOT23-6L PACKAGE

IN TAPE & REEL

SOT23-6L

(TSOP6)

APPLICATIONS

s

POWER MANAGEMENT IN PORTABLE

EQUIPMENTS

s

SWITCHING REGULATOR IN BATTERY

CHARGER APPLICATIONS

DESCRIPTION

The device is manufactured in low voltage PNP

Planar Technology by using a "Base Island"

layout.

The resulting Transistor shows exceptional high

gain performance coupled with very low

saturation voltage.

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

V

CBO

V

CEO

V

EBO

I

C

I

CM

I

B

I

BM

P

tot

T

stg

T

j

Parameter

Collector-Base Voltage (I

E

= 0)

Collector-Emitter Voltage (I

B

= 0)

Emitter-Base Voltage (I

C

= 0)

Collector Current

Collector Peak Current

Base Current

Base Peak Current

Total Dissipation at T

C

= 25 C

Storage Temperature

Max. Operating Junction Temperature

o

Value

-30

-30

-5

-3

-6

-0.2

-0.5

1.2

-65 to 150

150

Unit

V

V

V

A

A

A

A

W

o

o

C

C

July 2002

1/5

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