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STT3PF20V

P-CHANNEL 20V - 0.14

W

- 2.2A SOT23-6L

2.7-DRIVE STripFET鈩?II POWER MOSFET

TYPE

STT3PF20V

s

s

s

V

DSS

!脙W

R

DS(on)

1脙!脙

W

脙5#$W

1脙!$脙

W

脙5!&W

I

D

!!脙6

s

TYPICAL R

DS

(on) = 0.14

W

(@4.5V)

TYPICAL R

DS

(on) = 0.20

W

(@2.7V)

ULTRA LOW THRESHOLD GATE DRIVE

(2.7V)

STANDARD OUTLINE FOR EASY

AUTOMATED SURFACE MOUNT ASSEMBLY

SOT23-6L

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronis unique "Single Feature Size鈩?quot;

strip-based process. The resulting transistor

shows extremely high packing density for low on-

resistance, rugged avalanche characteristics and

less critical alignment steps therefore a remark-

able manufacturing reproducibility.

APPLICATIONS

s

DC-DC CONVERTERS

s

BATTERY MANAGEMENT IN NOMADIC

EQUIPMENT

s

CELLULAR

MARKING

s

STP2

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

V

DS

V

DGR

V

GS

I

D

I

D

I

DM

(

聹)

P

tot

Parameter

Drain-source Voltage (V

GS

= 0)

Drain-gate Voltage (R

GS

= 20 k

W

)

Gate- source Voltage

Drain Current (continuous) at T

C

= 25擄C

Drain Current (continuous) at T

C

= 100擄C

Drain Current (pulsed)

Total Dissipation at T

C

= 25擄C

Value

20

20

鹵 12

2.2

1.39

8.8

1.6

Unit

V

V

V

A

A

A

W

(

聹)

Pulse width limited by safe operating area.

October 2002

.

Note: P-CHANNEL MOSFET actual polarity of voltages and current

has to be reversed

1/8

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