鈩?/div>
HIGH dv/dt AND AVALANCHE CAPABILITIES
IMPROVED ESD CAPABILITY
LOW INPUT CAPACITANCE AND GATE
CHARGE
LOW GATE INPUT RESISTANCE
TIGHT PROCESS CONTROL AND HIGH
MANUFACTORING YIELDS
PowerSO-8
DESCRIPTION
The MDmesh鈩?is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company鈥檚 PowerMESH鈩?horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company鈥檚 proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar completition鈥檚 products.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
The MDmesh鈩?family is very suitable for increase
the power density of high voltage converters allow-
ing system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
Drain Current (continuous) at T
A
= 25擄C (1)
Drain Current (continuous) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Total Dissipation at T
A
= 25擄C (1)
Derating Factor (1)
dv/dt (3)
T
stg
T
j
August 2002
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
DRAIN CONTACT ALSO ON THE BACKSIDE
Value
600
600
鹵 30
2
0.37
1.26
8
70
3
0.02
15
鈥?65 to 150
Unit
V
V
V
A
A
A
A
W
W
W/擄C
V/ns
擄C
I
DM
(2)
P
TOT
P
TOT
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