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STSJ20NM20N Datasheet

  • STSJ20NM20N

  • N-CHANNEL 200V 0.11 OHM 20A POWERSO-8 ULTRA LOW GATE CHARGE ...

  • 6頁

  • ETC

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STSJ20NM20N
N-CHANNEL 200V - 0.11鈩?- 20A PowerSO-8鈩?/div>
ULTRA LOW GATE CHARGE MDmesh鈩I MOSFET
TARGET DATA
TYPE
STSJ20NM20N
s
s
s
s
s
s
V
DSS
200 V
R
DS(on)
< 0.13
鈩?/div>
I
D
20 A
WORLDWIDE LOWEST GATE CHARGE
TYPICAL R
DS
(on) = 0.11
鈩?/div>
HIGH dv/dt AND AVALANCHE CAPABILITIES
LOW INPUT CAPACITANCE
LOW GATE RESISTANCE
TIGHT PROCESS CONTROL AND HIGH
MANUFACTORING YIELDS
PowerSO-8
DESCRIPTION
This 200V MOSFET with a new advanced layout
brings all unique advantages of MDmesh technolo-
gy to lower voltages. The device exhibits worldwide
lowest gate charge for any given on-resistance.Its
use is therefore ideal as primary switch in isolated
DC-DC converters for Telecom and Computer appli-
cations.Used in combination with secondary-side
low-voltage STripFET
TM
products, it contributes to
reducing losses and boosting efficiency.The ex-
posed slug reduced the Rthj-c improving the current
capability
APPLICATIONS
The MDmesh鈩?family is very suitable for increasing
power density allowing system miniaturization and
higher efficiencies.
INTERNAL SCHEMATIC DIAGRAM
DRAIN CONTACT ALSO ON THE BACKSIDE
ORDERING INFORMATION
SALES TYPE
STSJ20NM20N
MARKING
SJ20NM20N
PACKAGE
PowerSO-8
PACKAGING
TAPE & REEL
June 2003
1/6

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