PowerSO-8鈩?/div>
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique 鈥淪ingle Feature
Size鈩⑩€?strip-based process. This silicon, housed
in thermally improved SO-8鈩?package, exhibits
optimal on-resistance versus gate charge trade-
off plus lower R
thj-c.
APPLICATIONS
鈻?/div>
SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS FOR MOBILE PC
S
Figure 2: Internal Schematic Diagram
DRAIN CONTACT ALSO ON THE BACKSIDE
Table 2:
Order Codes
SALES TYPE
MARKING
PACKAGE
STSJ18NF3LL
18F3LL)
PowerSO-8
PACKAGING
TAPE & REEL
Table 3:
ABSOLUTE MAXIMUM RATING
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C (*)
Drain Current (continuous) at T
C
= 100擄C(*)
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Total Dissipation at T
C
= 25擄C (#)
Value
30
30
鹵 16
18
18
72
70
3
(*) Value limited by wires bonding
Unit
V
V
V
A
A
A
W
W
(鈥?
Pulse width limited by safe operating area.
March 2005
Rev.
1.0
1/9
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