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STSJ100NH3LL Datasheet

  • STSJ100NH3LL

  • N-CHANNEL 30V - 0.0027 ohm - 100A PowerSO-8⑩ STripFET⑩ III...

  • 6頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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N-CHANNEL 30V - 0.0027
鈩?/div>
- 100A PowerSO-8鈩?/div>
STripFET鈩?III POWER MOSFET FOR DC-DC CONVERSION
TYPE
STSJ100NH3LL
s
s
s
s
s
STSJ100NH3LL
PRELIMINARY DATA
V
DSS
30 V
R
DS(on)
<0.0035
鈩?/div>
I
D
100 A
TYPICAL R
DS
(on) = 0.0027
鈩?/div>
@ 10V
OPTIMAL R
DS
(on) x Qg TRADE-OFF @ 4.5V
CONDUCTION LOSSES REDUCED
SWITCHING LOSSES REDUCED
IMPROVED JUNCTION-CASE THERMAL
RESISTANCE
PowerSO-8鈩?/div>
DESCRIPTION
The STSJ100NH3LL utilizes the latest advanced
design rules of ST鈥檚 proprietary STripFET鈩?/div>
technology. This process compled to unique
metallization techniques realizes the most
advanced low voltage MOSFET in SO-8 ever
produced. The exposed slug reduces the R
thj-c
improving the current capability.
APPLICATIONS
s
SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS FOR MOBILE PC
S
INTERNAL SCHEMATIC DIAGRAM
DRAIN CONTACT ALSO ON THE BACKSIDE
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
D
I
DM
(鈥?
P
tot
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
Drain Current (continuous) at T
C
= 25擄C (#)
Drain Current (continuous) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Total Dissipation at T
C
= 25擄C (#)
Value
30
30
鹵 18
100
22
62.5
400
70
3
Unit
V
V
V
A
A
A
A
W
W
(鈥?
Pulse width limited by safe operating area.
September 2003
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
1/6

STSJ100NH3LL 產(chǎn)品屬性

  • 1

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • STripFET™

  • MOSFET N 通道，金屬氧化物

  • 邏輯電平門

  • 30V

  • 25A

  • 3.5 毫歐 @ 12.5A，10V

  • 1V @ 250µA

  • 40nC @ 4.5V

  • 4450pF @ 25V

  • 3W

  • 表面貼裝

  • 8-SOIC（0.154"，3.90mm Width）裸露焊盤

  • 8-SOIC-EP

  • Digi-Reel?

  • 497-5785-6

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