鈩?/div>
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the second generation of
STMicroelectronics unique 鈥?Single Feature
Size鈩?鈥?strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore
a
remarkable
manufacturing
reproducibility.
APPLICATIONS
s
DC MOTOR DRIVE
s
DC-DC CONVERTERS
s
BATTERY MANAGMENT IN NOMADIC
EQUIPMENT
s
POWER MANAGEMENT IN
PORTABLE/DESKTOP PC
s
SO-8
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
V
DS
V
DGR
V
GS
I
D
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
G ate-source Voltage
Drain Current (continuous) at Tc = 25
o
C
Single O peration
Drain Current (continuous) at T
c
= 100
o
C
Single O peration
Drain Current (pulsed)
T otal Dissipation at T
c
= 25
o
C Dual Operation
o
T otal Dissipation at T
c
= 25 C Sinlge Operation
Value
30
30
鹵
20
7
4
28
2
1.6
Un it
V
V
V
A
A
A
W
W
I
DM
(
鈥?/div>
)
P
tot
(鈥? Pulse width limited by safe operating area
November 1999
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