鈩?/div>
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size鈩?quot;
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s
MOBILE PHONE APPLICATIONS
s
DC-DC CONVERTERS
s
BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
SO-8
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
Drain Current (continuous) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Information furnished is believed to be accurate and reliable. However, STMicroel
of use of such information nor for any infringement of patents or other rights of third
by implication or otherwise under any patent or patent rights of STMicroelectronic
Value
Unit
to change without notice. This publication supersedes and replaces all information
30
V
authorized for use as critical components in life support devices or systems withou
30
鹵 16
6
3.8
24
V
The ST logo is registered trademark of ST
V
廬
2003 STMicroelectronics - All Righ
A
All other names are the property of their re
A
(鈥?
Pulse width limited by safe operating area.
May 2003
.
STMicroelectronics GROUP OF CO
2.5
W
Australia - Brazil - China - Finland - France - Germany - Hong Kong - In
Singapore
actual
Sweden
of
Note: For the P-CHANNEL MOSFET
- Spain -
polarity
- Switzerland - Un
voltages and current has to be reversed
http://www.st.com
A
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