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STS6DNF30V Datasheet

  • STS6DNF30V

  • DUAL N-CHANNEL 30V - 0.026ohm - 6A SO-8 2.5V-DRIVE STripFET...

  • 269.63KB

  • 8頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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STS6DNF30V
DUAL N-CHANNEL 30V - 0.026鈩?- 6A SO-8
2.5V-DRIVE STripFET鈩?II POWER MOSFET
TYPE
STS6DNF30V
s
s
s
s
V
DSS
30 V
R
DS(on)
<0.030鈩?(@4.5V)
<0.038鈩?(@2.5V)
I
D
6A
TYPICAL R
DS
(on) = 0.026鈩?/div>
(@4.5V)
TYPICAL R
DS
(on) = 0.030鈩?/div>
(@2.5V)
ULTRA LOW THRESHOLD GATE DRIVE (2.5V)
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
SO-8
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique 鈥淪ingle Feature Size
鈩⑩€?/div>
strip-based process. The resulting transistor shows
extremely high packing density for low on-resis-
tance, rugged avalanche characteristics and less
critical alignment steps therefore a remarkable man-
ufacturing reproducibility.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s
BATTERY SAFETY UNIT IN NOMADIC
EQUIPMENT
s
DC-DC CONVERTERS
s
POWER MANAGEMENT IN PORTABLE/
DESKTOP PC
S
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuos) at T
C
= 25擄C
Single Operation
Drain Current (continuos) at T
C
= 100擄C
Single Operation
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C Dual Operation
Total Dissipation at T
C
= 25擄C Single Operation
Value
30
30
鹵12
6
3.8
24
2
1.6
Unit
V
V
V
A
A
A
W
W
I
DM
(
l
)
P
TOT
(
q
) Pulse width limited by safe operating area
July 2002
1/8

STS6DNF30V相關(guān)型號(hào)PDF文件下載

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  • 英文版
    DUAL N-CHANNEL 30V - 0.026ohm - 6A SO-8 2.5V-DRIVE STripFET...
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  • 英文版
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