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STS4NM20N Datasheet

  • STS4NM20N

  • N-CHANNEL 200V 0.11 OHM 4A SO-8 ULTRA LOW GATE CHARGE MDMESH...

  • 6頁

  • ETC

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STS4NM20N
N-CHANNEL 200V - 0.11鈩?- 4A SO-8
ULTRA LOW GATE CHARGE MDmesh鈩?II MOSFET
TARGET DATA
TYPE
STS4NM20N
s
s
s
s
s
s
V
DSS
200 V
R
DS(on)
< 0.13
鈩?/div>
I
D
4A
WORLDWIDE LOWEST GATE CHARGE
TYPICAL R
DS
(on) = 0.11鈩?/div>
HIGH dv/dt and AVALANCHE CAPABILITIES
LOW INPUT CAPACITANCE
LOW GATE RESISTANCE
TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
SO-8
DESCRIPTION
This 200V MOSFET with a new advanced layout
brings all unique advantages of MDmesh technolo-
gy to lower voltages. The device exhibits worldwide
lowest gate charge for any given on-resistance.Its
use is therefore ideal as primary switch in isolated
DC-DC converters for Telecom and Computer appli-
cations.Used in combination with secondary-side
low-voltage STripFET
TM
products, it contributes to
reducing losses and boosting efficiency
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
The MDmesh
TM
family is very suitable for increasing
power density allowing system miniaturization and
higher efficiencies
ORDERING INFORMATION
SALES TYPE
STS4NM20N
MARKING
S4NM20N
PACKAGE
SO-8
PACKAGING
TAPE & REEL
March 2003
1/6

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