鈩?/div>
V
RRM
30 V
I
D
4A
V
F(MAX)
0.51 V
SO-8
DESCRIPTION
This product associates the latest low voltage
STripFET鈩?in p-channel version to a low drop
Schottky diode. Such configuration is extremely ver-
satile in implementing, a large variety of DC-DC
converters for printers, portable equipment, and cel-
lular phones.
INTERNAL SCHEMATIC DIAGRAM
MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
q
)
P
TOT
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuos) at T
C
= 25擄C
Drain Current (continuos) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Value
30
30
鹵 20
4
3.4
16
1.6
Unit
V
V
V
A
A
A
W
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
I
RSM
Parameter
Repetitive Peak Reverse Voltage
RMS Forward Current
Average Forward Current
Surge Non Repetitive Forward Current
Repetitive Peak Reverse Current
Non Repetitive Peak Reverse Current
TL = 125擄C
未
= 0.5
tp = 10 ms
Sinusoidal
tp = 2
碌s
F = 1 kHz
tp = 100
碌s
Value
30
20
3
75
1
1
Unit
V
A
A
A
A
A
1/8
dv/dt
Critical Rate Of Rise Of Reverse Voltage
October 2000
Note: For the P-CHANNEL
10000
actual polarity of Voltages
MOSFET
V/碌s
and current has to be reversed