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STS4DPF30L Datasheet

  • STS4DPF30L

  • DUAL P-CHANNEL 30V - 0.07 ohm - 4A SO-8 STripFET⑩ POWER MOS...

  • 6頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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DUAL P-CHANNEL 30V - 0.07
鈩?/div>
- 4A SO-8
STripFET鈩?POWER MOSFET
PRELIMINARY DATA
TYPE
STS4DPF30L
s
s
STS4DPF30L
V
DSS
30 V
R
DS(on)
<0.08
鈩?/div>
I
D
4A
s
TYPICAL R
DS
(on) = 0.07
鈩?/div>
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size鈩?quot;
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s
BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
s
POWER MANAGEMENT IN CELLULAR
PHONES
s
DC-DC CONVERTER
SO-8
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
DM
(鈥?
P
tot
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C Single Operation
Drain Current (continuous) at T
C
= 100擄C Single Operation
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C Dual Operation
Total Dissipation at T
C
= 25擄C Single Operation
Value
30
30
鹵 16
4
2.5
16
2.0
1.6
Unit
V
V
V
A
A
A
W
W
(鈥?
Pulse width limited by safe operating area.
April 2002
Note: For the P-CHANNEL MOSFET actual polarity of voltages and
current has to be reversed
1/6
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

STS4DPF30L 產(chǎn)品屬性

  • STS4DPF30L View All Specifications

  • 1

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 陣列

  • STripFET™

  • 2 個 P 溝道（雙）

  • 標(biāo)準(zhǔn)型

  • 30V

  • 4A

  • 80 毫歐 @ 2A，10V

  • 1V @ 250µA

  • 16nC @ 5V

  • 1350pF @ 25V

  • 2W

  • 表面貼裝

  • 8-SOIC（0.154"，3.90mm 寬）

  • 8-SO

  • Digi-Reel?

  • 497-3228-6

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