鈩?/div>
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size鈩?quot;
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s
BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
s
POWER MANAGEMENT IN CELLULAR
PHONES
SO-8
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
DM
(鈥?
P
tot
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuos) at T
C
= 25擄C Single Operation
Drain Current (continuos) at T
C
= 100擄C Single Operation
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C Dual Operation
Total Dissipation at T
C
= 25擄C Single Operation
Value
20
20
鹵 16
4
2.5
16
1.6
2
Unit
V
V
V
A
A
A
W
W
(鈥?
Pulse width limited by safe operating area.
February 2002
.
Note: For the P-CHANNEL MOSFET actual polarity of voltages and
current has to be reversed
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