鈩?/div>
V
RRM
30 V
I
D
4A
V
F(MAX)
0.51 V
SO-8
DESCRIPTION
This product associates the latest low voltage
STripFET鈩?in n-channel version to a low drop
Schottky diode. Such configuration is extremely ver-
satile in implementing, a large variety of DC-DC
converters for printers, portable equipment, and cel-
lular phones.
INTERNAL SCHEMATIC DIAGRAM
MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
q
)
P
TOT
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
Drain Current (continuous) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Value
30
30
鹵 16
4
2.5
16
2
Unit
V
V
V
A
A
A
W
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
I
RSM
dv/dt
July 2002
Parameter
Repetitive Peak Reverse Voltage
RMS Forward Current
Average Forward Current
Surge Non Repetitive Forward Current
Repetitive Peak Reverse Current
Non Repetitive Peak Reverse Current
Critical Rate Of Rise Of Reverse Voltage
TL = 125擄C
未
= 0.5
tp = 10 ms
Sinusoidal
tp = 2
碌s
F=1 kHz
tp = 100
碌s
Value
30
20
3
75
1
1
10000
Unit
V
A
A
A
A
A
V/碌s
1/8
(鈥?Pulse width limited by safe operating area