鈩?/div>
in p-channel version to a low drop
Schottky diode. Such configuration is extremely
versatile in implementing, a large variety of DC-DC
converters for printers, portable equipment, and
cellular phones.
SO-8
INTERNAL SCHEMATIC DIAGRAM
MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Value
30
30
鹵
20
3
1.9
12
2
Unit
V
V
V
A
A
A
W
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RSM
dv/dt
Parameter
Repetitive Peak Reverse Voltage
RMS Forward Current
Average Forward Current
Surge Non Repetitive Forward Current
Non Repetitive Peak Reverse Current
Critical Rate Of Rise Of Reverse Voltage
T
L
=125
o
C
未
=0.5
tp= 10 ms
Sinusoidal
tp=100
碌s
Value
30
20
3
75
1
10000
Unit
V
A
A
A
A
V/碌s
(鈥? Pulse width limited by safe operating area
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
May 2000
1/5