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STS3DPF30L Datasheet

  • STS3DPF30L

  • DUAL P - CHANNEL 30V - 0.145ohm - 3A SO-8 STripFETO POWER MO...

  • 5頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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STS3DPF30L
DUAL P - CHANNEL 30V - 0.145鈩?- 3A SO-8
STripFET鈩?POWER MOSFET
PRELIMINARY DATA
TYPE
STS3DPF30L
s
s
V
DSS
30 V
R
DS(on)
< 0.16
鈩?/div>
I
D
3A
s
TYPICAL R
DS(on)
= 0.145
鈩?/div>
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the second generation of
STMicroelectronics unique "Single Feature Size鈩?/div>
" strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarka-
ble manufacturing reproducibility.
APPLICATIONS
s
BATTERY MANAGMENT IN NOMADIC
EQUIPMENT
s
POWER MANAGMENT IN CELLULAR
PHONES
s
DC-DC CONVERTER
SO-8
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
Gate-source Voltage
Drain Current (continuous) at Tc = 25
o
C
Single Operation
Drain Current (continuous) at T
c
= 100
o
C
Single Operation
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C Dual Operation
Total Dissipation at T
c
= 25
o
C Single Operation
Value
30
30
鹵
20
3
1.9
12
2
1.6
Unit
V
V
V
A
A
A
W
W
I
DM
(鈥?
P
tot
(鈥? Pulse width limited by safe operating area
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
May 2000
1/5

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