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STS3DPF20V Datasheet

  • STS3DPF20V

  • DUAL P-CHANNEL 20V - 0.090 ohm - 3A SO-8 STripFET⑩ POWER MO...

  • 8頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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DUAL P-CHANNEL 20V - 0.090
鈩?/div>
- 3A SO-8
STripFET鈩?POWER MOSFET
TYPE
STS3DPF20L
s
s
s
STS3DPF20V
V
DSS
20 V
R
DS(on)
<0.11
鈩?/div>
I
D
3A
s
TYPICAL R
DS
(on) = 0.090
鈩?/div>
@ 4.5 V
TYPICAL R
DS
(on) = 0.1
鈩?/div>
@ 2.7 V
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
ULTRA LOW THRESHOLD
GATE DRIVE (2.7 V)
SO-8
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size鈩?quot;
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s
BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
s
MOBILE PHONE APPLICATIONS
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
DM
(鈥?
P
tot
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C Single Operation
Drain Current (continuous) at T
C
= 100擄C Single Operation
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C Dual Operation
Total Dissipation at T
C
= 25擄C Single Operation
Value
20
20
鹵 12
3
1.9
12
1.6
2
Unit
V
V
V
A
A
A
W
W
(鈥?
Pulse width limited by safe operating area.
June 2002
.
Note: For the P-CHANNEL MOSFET actual polarity of voltages and
current has to be reversed
1/8

STS3DPF20V 產(chǎn)品屬性

  • STMicroelectronics

  • MOSFET

  • P-Channel

  • - 20 V

  • +/- 12 V

  • 3 A

  • 0.11 Ohms

  • Dual Dual Drain

  • + 150 C

  • SMD/SMT

  • SO-8

  • Reel

  • 12 ns

  • - 55 C

  • 2 W

  • 39 ns

  • 2500

  • 54 ns

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