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STS3C3F30L Datasheet

  • STS3C3F30L

  • N-CHANNEL 30V - 0.050 ohm - 3.5A SO-8 P-CHANNEL 30V - 0.140 ...

  • 10頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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STS3C3F30L
N-CHANNEL 30V - 0.050
鈩?/div>
- 3.5A SO-8
P-CHANNEL 30V - 0.140
鈩?/div>
- 3A SO-8
STripFET鈩?II POWER MOSFET
TYPE
STS3C3F30L(N-Channel)
STS3C3F30L(P-Channel)
s
s
s
V
DSS
30 V
30 V
R
DS(on)
< 65 m鈩?/div>
< 165 m鈩?/div>
I
D
3.5 A
3A
s
TYPICAL R
DS
(on) (N-Channel) = 50 m鈩?/div>
TYPICAL R
DS
(on) (P-Channel) = 140 m鈩?/div>
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
LOW THRESHOLD DRIVE
SO-8
DESCRIPTION
This application specific Power MOSFET is the second
generation of STMicroelectronis unique "Single Feature
Size鈩?quot; strip-based process. The resulting transistor
shows extremely high packing density for low on-resis-
tance, rugged avalanche characteristics and less critical
alignment steps therefore a remarkable manufacturing re-
producibility.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s
DC/DC CONVERTERS
s
BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
s
POWER MANAGEMENT IN CELLULAR
PHONES
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuos) at T
C
= 25擄C
Single Operating
Drain Current (continuos) at T
C
= 100擄C
Single Operating
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C Dual Operating
Total Dissipation at T
C
= 25擄C Single Operating
Storage Temperature
Max. Operating Junction Temperature
3.5
2.2
14
1.6
2
-60 to 150
150
N-CHANNEL
30
30
鹵 16
2.7
1.7
11
P-CHANNEL
Unit
V
V
V
A
A
A
W
W
擄C
擄C
(鈥?
Pulse width limited by safe operating area.
February 2002
.
Note: P-CHANNEL MOSFET actual polarity of voltages and current
has to be reversed
1/10

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