鈩?/div>
V
RRM
30 V
I
D
3A
V
F(MAX)
0.46 V
SO-8
DESCRIPTION
This product associates the latest low voltage
STripFET鈩?in n-channel version to a low drop
Schottky diode. Such configuration is extremely ver-
satile in implementing, a large variety of DC-DC
converters for printers, portable equipment, and cel-
lular phones.
INTERNAL SCHEMATIC DIAGRAM
MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
q
)
P
TOT
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuos) at T
C
= 25擄C
Drain Current (continuos) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Value
30
30
鹵 15
3
1.9
12
2
Unit
V
V
V
A
A
A
W
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RSM
dv/dt
Parameter
Repetitive Peak Reverse Voltage
RMS Forward Current
Average Forward Current
Surge Non Repetitive Forward Current
Non Repetitive Peak Reverse Current
Critical Rate Of Rise Of Reverse Voltage
TL = 135擄C
未
= 0.5
tp = 10 ms
Sinusoidal
tp = 100
碌s
Value
30
7
1
45
1
10000
Unit
V
A
A
A
A
V/碌s
(鈥?Pulse width limited by safe operating area
August 2001
1/6