鈩?/div>
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size鈩?quot;
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s
DC MOTOR DRIVE
s
DC-DC CONVERTERS
s
BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
s
POWER MANAGEMENT IN
PORTABLE/DESKTOP PCs
SO-8
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
T
stg
T
j
February 2002
.
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuos) at T
C
= 25擄C
Single Operating
Drain Current (continuos) at T
C
= 100擄C
Single Operating
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C Dual Operating
Total Dissipation at T
C
= 25擄C Single Operating
Storage Temperature
Max. Operating Junction Temperature
Value
30
30
鹵 18 V
3
1.9
9
1.6
2
-55 to 150
150
Unit
V
V
V
A
A
A
W
W
擄C
擄C
1/8
(鈥?
Pulse width limited by safe operating area.