鈩?/div>
@ 10V
OPTIMAL R
DS
(on) x Qg TRADE-OFF @ 4.5V
CONDUCTION LOSSES REDUCED
SWITCHING LOSSES REDUCED
DESCRIPTION
The STS25NH3LL utilizes the latest advanced design
rules of ST's propetary STripFET鈩?technology. This
novel 0.6碌 process coupled to unique metalization
techniques re alizes the most advanced low voltage
MOSFET in SO-8 ever produced. It is therefore suit able
for the most demanding DC-DC converter applications
where high efficiency is to be achived at high output
current.
SO-8
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s
DC-DC CONVERTERS FOR TELECOM AND
NOTEBOOK CPU CORE
s
SYNCHRONOUS RECTIFIER
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
E
AS (1)
P
tot
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
Drain Current (continuous) at T
C
= 100擄C
Drain Current (pulsed)
Single Pulse Avalanche Energy
Total Dissipation at T
C
= 25擄C
Value
30
30
鹵 18
25
18
100
200
3.2
(1)
Starting T
j
= 25
o
C
Unit
V
V
V
A
A
A
mJ
W
V
DD
= 30V
(鈥?
Pulse width limited by safe operating area.
September 2003
.
I
D
= 12.5A
1/8