(on) = 4.1鈩?/div>
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
GATE CHARGE MINIMIZED
DESCRIPTION
The SuperMESH鈩?series is obtained through an
extreme optimization of ST鈥檚 well established strip-
based PowerMESH鈩?layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh鈩?products.
SO-8
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
SWITCH MODE LOW POWER SUPPLIES
(SMPS)
s
DC-DC CONVERTERS
s
LOW POWER, LOW COST CFL (COMPACT
FLUORESCENT LAMPS)
s
LOW POWER BATTERY CHARGERS
s
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
DM
( )
P
TOT
dv/dt(1)
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
Drain Current (continuous) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C Dual Operation
Total Dissipation at T
C
= 25擄C Single Operation
Peak Diode Recovery voltage slope
Value
450
450
鹵 30
0.40
0.25
1.6
1.6
2
3
(1)I
SD
鈮?/div>
0.4 A, di/dt
鈮?00A/碌s,
V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX.
Unit
V
V
V
A
A
A
W
W
V/ns
(
q
) Pulse width limited by safe operating area
June 2003
1/8
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