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STS1C1S250 Datasheet

  • STS1C1S250

  • N-CHANNEL 250V - 0.9Ohm - 0.75A SO-8 P-CHANNEL 250V - 2.1Ohm...

  • 10頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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STS1C1S250
N-CHANNEL 250V - 0.9鈩?- 0.75A SO-8
P-CHANNEL 250V - 2.1鈩?- 0.6A SO-8
MESH OVERLAY POWER MOSFET
TYPE
STS1C1S250(N-Channel)
STS1C1S250(P-Channel)
s
s
s
s
V
DSS
250 V
250 V
R
DS(on)
<1.4鈩?/div>
<2.8鈩?/div>
I
D
0.80 A
0.60 A
TYPICAL R
DS(on)
(N-Channel) = 0.9
鈩?/div>
TYPICAL R
DS(on)
(P-Channel) = 2.1
鈩?/div>
GATE-SOURCE ZENER DIODE
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
SO-8
DESCRIPTION
This complementary pair uses the Company's pro-
prietary high voltage MESH OVERLAY鈩?process
based on advanced strip layout and efficient edge
termination. Designed for high volume manufactur-
ing capability, it is ideal in lighting converters such as
CFL supplied from 120V mains.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s
LIGHTING
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
1
)
P
TOT
T
stg
T
j
October 2003
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
Drain Current (continuous) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C Single Operation
Total Dissipation at T
C
= 25擄C Dual Operation
Storage Temperature
Max. Operating Junction Temperature
0.75
0.47
3
1.6
2
鈥?5 to 150
150
250
250
鹵25
0.60
0.38
2.4
Value
N-CHANNEL
P-CHANNEL
250
250
V
V
V
A
A
A
W
擄C
擄C
1/10
Unit
(1)Pulse width limited by safe operating area

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