鈩?/div>
STANDARDOUTLINEFOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size鈩?quot;
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance.
APPLICATIONS
鈻?/div>
BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
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LOAD SWITCH
SO-8
Figure 2: Internal Schematic Diagram
Table 2:
Order Codes
SALES TYPE
STS10PF30L
MARKING
S10PF30L
PACKAGE
SO-8
PACKAGING
TAPE & REEL
Table 3:
ABSOLUTE MAXIMUM RATING
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
Drain Current (continuous) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Value
30
30
鹵 16
10
6
40
2.5
Unit
V
V
V
A
A
A
W
Note: For the P-CHANNEL MOSFET actual polarity of voltages and
current has to be reversed
May 2005
Rev.
2.0
1/9
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