鈩?/div>
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED
ADD SUFFIX 鈥?AP鈥?FOR ORDERING IN
AMMOPAK
TO-92
TO-92 (Ammopack)
DESCRIPTION
Using the latest high voltage MESH OVERLAY鈩I
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company鈥檚 proprietary edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
SWITCH MODE LOW POWER SUPPIES
(SMPS)
n
BATTERY CHARGER
n
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
l
)
P
TOT
dv/dt(1)
T
stg
T
j
April 2002
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuos) at T
C
= 25擄C
Drain Current (continuos) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
Value
600
600
鹵
30
0.38
0.24
1.52
3.1
0.028
3
鈥?5 to 150
150
(1)I
SD
鈮?/div>
0.3 A, di/dt
鈮?00A/碌s,
V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX.
Unit
V
V
V
A
A
A
W
W/擄C
V/ns
擄C
擄C
1/7
(鈥?Pulse width limited by safe operating area
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