廬
STPS80H100TV
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
Tj (max)
V
F
(max)
FEATURES AND BENEFITS
NEGLIGIBLE SWITCHING LOSSES
HIGH JUNCTION TEMPERATURE CAPABILITY
LOW LEAKAGE CURRENT
GOOD TRADE OFF BETWEEN LEAKAGE CUR-
RENT AND FORWARD VOLTAGE DROP
AVALANCHE RATED
LOW INDUCTANCE PACKAGE
INSULATED PACKAGE :
Insulated voltage = 2500 V
(RMS)
Capacitance = 45 pF
DESCRIPTION
High voltage dual Schottky barrier rectifier
designed for high frequency telecom and
computer Switched Mode Power Supplies
and other power converters.
ABSOLUTE RATINGS
(limiting values, per diode)
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
I
RSM
T
stg
Tj
dV/dt
RMS forward current
Average forward current
Surge non repetitive forward current
Repetitive peak reverse current
Non repetitive peak reverse current
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
Tc = 120擄C
未
= 0.5
tp = 10 ms sinusoidal
tp = 2
碌s
square F = 1kHz
tp = 100
碌s
square
Per diode
Per device
Parameter
Repetitive peak reverse voltage
Value
100
125
40
80
700
2
5
- 55 to + 150
150
10000
Unit
V
A
A
A
A
A
擄C
擄C
V/碌s
2 x 40 A
100 V
150 擄C
0.65 V
K1
A1
K2
A2
ISOTOP
TM
Packaged in ISOTOP, this device is intended for
use in medium voltage operation, and particu-
larly, in high frequency circuitries where low
switching losses and low noise are required.
* :
dPtot
1
<
thermal runaway condition for a diode on its own heatsink
Rth
(
j
鈭?/div>
a
)
dTj
July 1999 - Ed: 3A
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