廬
STPS160H100TV
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
Tj (max)
V
F
(max)
FEATURES AND BENEFITS
NEGLIGIBLESWITCHING LOSSES
HIGH JUNCTION TEMPERATURE CAPABILITY
LOW LEAKAGE CURRENT
GOOD TRADE OFF BETWEEN LEAKAGE
CURRENT AND FORWARD VOLTAGE DROP
AVALANCHERATED
LOW INDUCTION PACKAGE
INSULATED PACKAGE:
Insulating Voltage = 2500 V
(RMS)
Capacitance = 45 pF
DESCRIPTION
High voltage dual Schottky rectifier designed
for high frequency telecom and computer
Switched Mode Power Supplies and other
power converters.
ABSOLUTE RATINGS
(limiting values, per diode)
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
I
RSM
T
stg
Tj
dV/dt
Parameter
Repetitive peak reverse voltage
RMS forward current
Average forward current
Surge non repetitive forward current
Repetitive peak reverse current
Non repetitive peak reverse current
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
Tc = 110擄C
未
= 0.5
Per diode
Per device
Value
100
180
80
160
1000
2
10
- 55 to+ 150
150
10000
Unit
V
A
A
A
A
A
擄
C
擄C
V/
碌
s
Package d in ISOTOP, this device is intended for
use in medium voltage operation, and particu-
larly, in high frequency circuitries where low
switching losses and low noise are required.
2 x 80 A
100 V
150
擄C
0.68 V
K1
A1
K2
A2
ISOTOP
TM
tp = 10 ms sinusoidal
tp = 2
碌s
square F = 1kHz
tp = 100
碌s
square
* :
1
dPtot
<
thermal runaway condition for a diode on its own heatsink
Rth
(
j
鈭?/div>
a
)
dTj
July 1999 - Ed: 2A
1/4
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