LITE-ON
SEMICONDUCTOR
STPR610CT thru 620CT
REVERSE VOLTAGE
- 100
to
200
Volts
FORWARD CURRENT
- 6.0
Amperes
SUPER FAST
GLASS PASSIVATED RECTIFIER
FEATURES
Glass passivated chip
Superfast switching time for high efficiency
Low forward voltage drop and high current capability
Low reverse leakage current
High surge capacity
Plastic package has UL flammability classification 94V-0
1
TO-220AB
B
C
K
PIN
2
3
L
M
D
A
E
TO-220AB
MAX.
MIN.
DIM.
14.22
15.88
A
10.67
B
9.65
3.43
C
2.54
D
6.86
5.84
9.28
8.26
E
F
G
H
I
J
K
-
12.70
2.29
0.51
0.30
3.53
3.56
6.35
14.73
2.79
1.14
0.64
4.09
4.83
F
MECHANICAL DATA
Case : TO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any
I
J
N
H H
PIN 1
PIN 3
G
PIN 2
CASE
L
M
1.14
1.40
2.92
2.03
N
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
鈩?/div>
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
STPR610CT
100
70
100
6.0
30
40
0.99
1.20
1.25
5
50
35
30
6.5
-55 to +150
V
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
Non Repetitive Peak Forward
Surge Current Per Diode
Sinusoidal (JEDEC Method)
Maximum forward Voltage
Pulse Width =300us
Duty cycle
SYMBOL
STPR620CT
200
140
200
UNIT
V
V
V
A
V
RRM
V
RMS
V
DC
I
(AV)
@T
C
=
125 C
T
P
=
10ms
T
P
=
8.3ms
I
FSM
A
I
F
=
3A @T
J
=125 C
I
F
=
6A @T
J
=125 C
I
F
=
6A @T
J
=25 C
@T
J
=25 C
@T
J
=100 C
V
F
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance
per element (Note 1)
I
R
C
J
T
RR
R
0JC
uA
uA
pF
ns
C/W
Maximum Reverse Recovery Time (Note 2)
Typical Thermal Resistance
Operating and Storage Temperature Range
T
J
,T
STG
C
REV. 3, 13-Sep-2001, KTGC06
NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Reverse Recovery Test Conditions:I
F
=0.5A,I
R
=1.0A,I
RR
0.25A.
1
2
