STPQ1NC60R Datasheet

IC型號(hào)：
STPQ1NC60R
PDF描述：
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 300MA I(D)...
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96.65KB
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9頁
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STQ1NC60R

N-CHANNEL 600V - 12鈩?- 0.3A TO-92

PowerMESH鈩?II Power MOSFET

TYPE

STPQ1NC60R

DSS

600 V

DS(on)

< 15

鈩?/div>

0.3 A

TYPICAL R

(on) = 12

鈩?/div>

EXTREMELY HIGH dv/dt CAPABILITY

100% AVALANCHE TESTED

NEW HIGH VOLTAGE BENCHMARK

GATE CHARGE MINIMIZED

TO-92

BULK

TO-92

(AMMOPACK)

DESCRIPTION

Using the latest high voltage MESH OVERLAY鈩I

process, STMicroelectronics has designed an ad-

vanced family of power MOSFETs with outstanding

performances. The new patent pending strip layout

coupled with the Company鈥檚 proprietary edge termi-

nation structure, gives the lowest RDS(on) per area,

exceptional avalanche and dv/dt capabilities and

unrivalled gate charge and switching characteris-

tics.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

LOW SWITCH MODE POWER SUPPLIES

(SMPS)

BATTERY CHARGER

ORDERING INFORMATION

SALES TYPE

STQ1NC60R

STQ1NC60R-AP

MARKING

Q1NC60R

PACKAGE

TO-92

PACKAGING

BULK

AMMOPACK

May 2002

1/9

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TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 300MA I(D)...

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STPQ1NC60R

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