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STP9NC65FP Datasheet

  • STP9NC65FP

  • N-CHANNEL 650V - 0.75omp - 8A TO-220/TO-220FP PowerMesh⑩II ...

  • 9頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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STP9NC65
STP9NC65FP
N-CHANNEL 650V - 0.75鈩?- 8A TO-220/TO-220FP
PowerMesh鈩I MOSFET
TYPE
STP9NC65
STP9NC65FP
s
s
s
s
s
V
DSS
650 V
650 V
R
DS(on)
< 0.90
鈩?/div>
< 0.90
鈩?/div>
I
D
8A
8A
TYPICAL R
DS
(on) = 0.75
鈩?/div>
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED
3
1
2
TO-220
(Available Upon Request)
TO-220FP
DESCRIPTION
The PowerMESH
鈩?/div>
II is the evolution of the first
generation of MESH OVERLAY
鈩?
The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVES
s
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
q
)
P
TOT
dv/dt (1)
V
ISO
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuos) at T
C
= 25擄C
Drain Current (continuos) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
-
鈥?5 to 150
150
(1)I
SD
鈮?A,
di/dt
鈮?00A/碌s,
V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX.
Value
STP9NC65
650
650
鹵30
8
5
32
140
1.12
3.5
2000
8(*)
5(*)
32(*)
40
0.32
STP9NC65FP
Unit
V
V
V
A
A
A
W
W/擄C
V/ns
V
擄C
擄C
(鈥?Pulse width limited by safe operating area
(*) Limited only by maximum temperature allowed
February 2001
1/9

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