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STP9NC60 Datasheet

  • STP9NC60

  • N - CHANNEL 600V - 0.6ohm - 9A TO-220/TO-220FP PowerMESHII M...

  • 9頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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廬
STP9NC60
STP9NC60FP
N - CHANNEL 600V - 0.6鈩?- 9A TO-220/TO-220FP
PowerMESH鈩?/div>
螜螜
MOSFET
T YPE
STP9NC60
STP9NC60FP
錕?frac12;
錕?frac12;
錕?frac12;
錕?frac12;
錕?frac12;
V
DSS
600 V
600 V
R
DS(on)
< 0.75
鈩?/div>
< 0.75
鈩?/div>
I
D
9.0 A
5.2 A
TYPICAL R
DS(on)
= 0.6
鈩?/div>
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED
1
2
3
1
2
3
DESCRIPTION
The PowerMESH鈩?/div>
II
is the evolution of the first
generation of MESH OVERLAY鈩?. The layout
refinements introduced greatly improve the
Ron*area figure of merit while keeping the device
at the leading edge for what concerns switching
speed, gate charge and ruggedness.
APPLICATIONS
錕?frac12;
HIGH CURRENT, HIGH SPEED SWITCHING
錕?frac12;
SWITH MODE POWER SUPPLIES (SMPS)
錕?frac12;
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
dv/dt(
1
)
V
ISO
T
s tg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
G ate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
T otal Dissipation at T
c
= 25
o
C
Derating Factor
Peak Diode Recovery voltage slope
Insulation W ithstand Voltage (DC)
Storage Temperature
Max. O perating Junction Temperature
o
Value
ST P9NC60
STP9NC60F P
600
600
鹵
30
9.0
5.7
36
125
1.0
4.5
錚?/div>
-65 to 150
150
(
1
) I
SD
鈮?/div>
9A, di/dt
鈮?/div>
200 A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, Tj
鈮?/div>
T
JMAX
Unit
V
V
V
A
A
A
W
W/ C
V/ns
V
o
o
o
5.2
3.3
36
40
0.32
4.5
2000
C
C
1/9
(鈥? Pulse width limited by safe operating area
February 2000

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