鈩?/div>
FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
3
1
3
1
2
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size鈩?quot;
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s
SOLENOID AND RELAY DRIVERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC CONVERTERS
s
AUTOMOTIVE ENVIRONMENT
D
2
PAK
TO-263
(Suffix 鈥淭4鈥?
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D(
鈥?/div>
)
I
D
I
DM
(鈥⑩€?
P
tot
dv/dt
(1)
E
AS
(2)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
Drain Current (continuous) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
Max. Operating Junction Temperature
Value
55
55
鹵 20
80
80
320
300
2.0
10
980
-55 to 175
Unit
V
V
V
A
A
A
W
W/擄C
V/ns
mJ
擄C
(
鈥?/div>
)Current Limited by Package
(鈥⑩€?
Pulse width limited by safe operating area
(1)
I
SD
鈮?0A,
di/dt
鈮?00A/碌s,
V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
.
(2)
Starting T
j
= 25
o
C I
D
= 40A
V
DD
= 25V
January 2003
1/10
next