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- 80A TO-220

STripFET鈩?II POWER MOSFET

TYPE

STB80PF55

s

STP80PF55

PRELIMINARY DATA

V

DSS

55 V

R

DS(on)

< 0.018

鈩?/div>

I

D

80 A

TYPICAL R

DS

(on) = 0.016

鈩?/div>

EXCEPTIONAL dv/dt CAPABILITY

100% AVALANCHE TESTED

APPLICATION ORIENTED

CHARACTERIZATION

1

2

3

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronis unique "Single Feature Size鈩?quot;

strip-based process. The resulting transistor

shows extremely high packing density for low on-

resistance, rugged avalanche characteristics and

less critical alignment steps therefore a remark-

able manufacturing reproducibility.

APPLICATIONS

s

MOTOR CONTROL

s

DC-DC & DC-AC CONVERTERS

TO-220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

V

DS

V

DGR

V

GS

I

D

(*)

I

D

I

DM

(鈥?

P

tot

dv/dt

(1)

E

AS (2)

T

stg

T

j

Parameter

Drain-source Voltage (V

GS

= 0)

Drain-gate Voltage (R

GS

= 20 k鈩?

Gate- source Voltage

Drain Current (continuos) at T

C

= 25擄C

Drain Current (continuos) at T

C

= 100擄C

Drain Current (pulsed)

Total Dissipation at T

C

= 25擄C

Derating Factor

Peak Diode Recovery voltage slope

Single Pulse Avalanche Energy

Storage Temperature

Max. Operating Junction Temperature

Value

55

鹵 16

80

57

320

300

2

7

1.4

-55 to 175

Unit

V

A

W

W/擄C

V/ns

mJ

擄C

(鈥?

Pulse width limited by safe operating area

(*) Current Limited by Package

Note: For the P-CHANNEL MOSFET actual polarity of voltages and

current has to be reversed

(1) I

SD

鈮?/div>

40A, di/dt

鈮?/div>

300A/碌s, V

DD

鈮?/div>

V

(BR)DSS

, T

j

鈮?/div>

T

JMAX.

(2) Starting T

j

= 25

o

C, I

D

= 80A, V

DD

= 40V

February 2002

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

1/6

其它有關(guān)文件
STP80PF55 View All Specifications
標(biāo)準(zhǔn)包裝
50
類別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 單
系列
STripFET™
FET 型
MOSFET P 通道，金屬氧化物
FET 特點(diǎn)
標(biāo)準(zhǔn)型
漏極至源極電壓(Vdss)
55V
電流 - 連續(xù)漏極(Id) @ 25° C
80A
開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C
18 毫歐 @ 40A，10V
Id 時(shí)的 Vgs(th)（最大）
4V @ 250µA
閘電荷(Qg) @ Vgs
258nC @ 10V
輸入電容 (Ciss) @ Vds
5500pF @ 25V
功率 - 最大
300W
安裝類型
通孔
封裝/外殼
TO-220-3
供應(yīng)商設(shè)備封裝
TO-220AB
包裝
管件
其它名稱
497-2729-5

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