(on) = 0.0065鈩?/div>
LOW THRESHOLD DRIVE
3
12
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size鈩?quot;
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS
s
SOLENOID AND RELAY DRIVERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC CONVERTERS
s
AUTOMOTIVE ENVIRONMENT
D
2
PAK
TO-263
I
2
PAK
TO-262
3
1
2
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
(鈥?
I
D
I
DM
(鈥⑩€?
P
tot
E
AS (1)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuos) at T
C
= 25擄C
Drain Current (continuos) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Single Pulse Avalanche Energy
Storage Temperature
Max. Operating Junction Temperature
Value
55
55
鹵 20
80
57
320
300
2
870
-55 to 175
(1) Starting T
j
= 25
o
C, I
D
= 40A, V
DD
= 30V
Unit
V
V
V
A
A
A
W
W/擄C
mJ
擄C
(鈥? Current limited by package
(鈥⑩€?
Pulse width limited by safe operating area.
March 2002
.
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