鈩?/div>
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
3
1
2
3
1
2
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique 鈥漇ingle Feature
Size鈩?鈥?strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalance characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s
SOLENOID AND RELAY DRIVERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC CONVERTERS
s
AUTOMOTIVE ENVIRONMENT
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
STP80NF55-06
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
鈥?/div>
)
P
tot
V
ISO
dv/dt
T
s tg
T
j
July 1999
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
G ate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
T otal Dissipation at T
c
= 25
o
C
Derating Factor
Insulation W ithstand Voltage (DC)
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
80
57
320
210
1.43
錚?/div>
7
-65 to 175
175
(
1
) I
SD
鈮?/div>
80 A, di/dt
鈮?/div>
300 A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
Unit
STP55NF 55-06FP
55
55
鹵
20
60
42
240
50
0.33
2000
V
V
V
A
A
A
W
W/
o
C
V
V/ns
o
o
C
C
1/6
(鈥? Pulse width limited by safe operating area
next
STP80NF55-06FP 產(chǎn)品屬性
50
分離式半導(dǎo)體產(chǎn)品
FET - 單
STripFET™
MOSFET N 通道,金屬氧化物
標(biāo)準(zhǔn)型
55V
60A
6.5 毫歐 @ 40A,10V
4V @ 250µA
189nC @ 10V
4400pF @ 25V
45W
通孔
TO-220-3 整包
TO-220FP
管件
STP80NF55-06FP相關(guān)型號PDF文件下載
-
型號
版本
描述
廠商
下載
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