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STP80NF04 Datasheet

  • STP80NF04

  • N-CHANNEL 40V - 0.008 OHM - 80A D2PAK/TO-220 STRIPFET II POW...

  • 206.83KB

  • 8頁

  • ETC

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STB80NF04
STP80NF04
N-CHANNEL 40V - 0.008
鈩?/div>
- 80A D虜PAK/TO-220
STripFET鈩?II POWER MOSFET
PRELIMINARY DATA
TYPE
STB80NF04
STP80NF04
s
s
s
s
V
DSS
40 V
40 V
R
DS(on)
< 0.010
鈩?/div>
< 0.010
鈩?/div>
I
D
80 A
80 A
s
TYPICAL R
DS
(on) = 0.008
鈩?/div>
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
SURFACE-MOUNTING D虜PAK (TO-263)
POWER PACKAGE IN TAPE & REEL
(SUFFIX 鈥淭4")
3
1
3
1
2
D
2
PAK
TO-263
(Suffix 鈥淭4鈥?
TO-220
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size鈩?quot; strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps
therefore
a
remarkable
manufacturing
reproducibility.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s
HIGH CURRENT, HIGH SWITCHING SPEED
Ordering Information
SALES TYPE
STB80NF04T4
STP80NF04
MARKING
B80NF04
P80NF04
PACKAGE
TO-263
TO-220
PACKAGING
TAPE & REEL
TUBE
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
dv/dt
(1)
E
AS(2)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
Drain Current (continuous) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
Operating Junction Temperature
Value
40
40
鹵 20
80
60
320
150
1.0
5
650
-55 to 175
(1) I
SD
鈮?0A,
di/dt
鈮?00A/碌s,
V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 40A, V
DD
= 20V
Unit
V
V
V
A
A
A
W
W/擄C
V/ns
mJ
擄C
(鈥?
Pulse width limited by safe operating area.
October 2003
1/8
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

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