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STP7NC40 Datasheet

  • STP7NC40

  • N-CHANNEL 400V - 0.75ohm - 6A TO-220 PowerMESH⑩II MOSFET

  • 8頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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STP7NC40
N-CHANNEL 400V - 0.75鈩?- 6A TO-220
PowerMESH鈩I MOSFET
TYPE
STP7NC40
s
s
s
s
V
DSS
400 V
R
DS(on)
<1
鈩?/div>
I
D
6A
TYPICAL R
DS
(on) = 0.75鈩?/div>
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW GATE CHARGE
3
1
2
DESCRIPTION
The PowerMESH鈩I is the evolution of the first gen-
eration of MESH OVERLAY鈩? The layout refine-
ments introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
TO-220
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s
HIGH-EFFICIENCY DC-DC CONVERTERS
s
UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
q
)
P
TOT
dv/dt(1)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuos) at T
C
= 25擄C
Drain Current (continuos) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
Value
400
400
鹵 30
6
4
24
100
0.8
3
鈥?5 to 150
150
(1)I
SD
鈮?A,
di/dt
鈮?00A/碌s,
V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX.
Unit
V
V
V
A
A
A
W
W/擄C
V/ns
擄C
擄C
(
q
) Pulse width limited by safe operating area
March 2001
1/8

STP7NC40 產(chǎn)品屬性

  • STMicroelectronics

  • MOSFET

  • N-Channel

  • 400 V

  • +/- 30 V

  • 6 A

  • 0.75 Ohms

  • Single

  • + 150 C

  • Through Hole

  • TO-220

  • 12 ns

  • 5.1 S

  • - 65 C

  • 100 W

  • 15 ns

  • 1000

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  • 英文版
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  • 英文版
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