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STP7NB80FP Datasheet

  • STP7NB80FP

  • N - CHANNEL 800V - 1.2ohm - 6.5A - TO-220/TO-220FP PowerMESH...

  • 108.95KB

  • 9頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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廬
STP7NB80
STP7NB80FP
N - CHANNEL 800V - 1.2鈩?- 6.5A - TO-220/TO-220FP
PowerMESH鈩?MOSFET
TYPE
ST P7NB80
ST P7NB80FP
s
s
s
s
s
V
DSS
800 V
800 V
R
DS(on)
< 1.5
鈩?/div>
< 1.5
鈩?/div>
I
D
6.5 A
6.5 A
TYPICAL R
DS(on)
= 1.2
鈩?/div>
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
3
1
2
3
1
2
DESCRIPTION
Using the latest high voltage MESH OVERLAY鈩?/div>
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company鈥檚
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
dv/dt(
1
)
V
ISO
T
s tg
T
j
(
*)
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
Gate-source Voltage
Drain Current (continuous) at T
c
= 25 C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
T otal Dissipation at T
c
= 25 C
Derating Factor
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction T emperature
o
o
Value
STP7NB80
STP7NB80F P
800
800
鹵
30
6.5
4.1
26
135
1.08
4.5
--
-65 to 150
150
(
1
) I
SD
鈮?/div>
6.5A, di/dt
鈮?/div>
200 A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, Tj
鈮?/div>
T
JMAX
Un it
V
V
V
6.5(*)
4.1(*)
26
40
0.32
4.5
2000
A
A
A
W
W/ C
V/ns
o
o
o
o
C
C
C
(鈥? Pulse width limited by safe operating area
Limited only maximum temperature allowed
April 1999
1/9

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