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STP7NB80

STP7NB80FP

N - CHANNEL 800V - 1.2鈩?- 6.5A - TO-220/TO-220FP

PowerMESH鈩?MOSFET

TYPE

ST P7NB80

ST P7NB80FP

s

V

DSS

800 V

R

DS(on)

< 1.5

鈩?/div>

< 1.5

鈩?/div>

I

D

6.5 A

TYPICAL R

DS(on)

= 1.2

鈩?/div>

EXTREMELY HIGH dv/dt CAPABILITY

100% AVALANCHE TESTED

VERY LOW INTRINSIC CAPACITANCES

GATE CHARGE MINIMIZED

3

1

2

3

1

2

DESCRIPTION

Using the latest high voltage MESH OVERLAY鈩?/div>

process, STMicroelectronics has designed an

advanced family of power MOSFETs with

outstanding performances. The new patent

pending strip layout coupled with the Company鈥檚

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

ABSOLUTE MAXIMUM RATINGS

Symbol

V

DS

V

DGR

V

GS

I

D

I

D

I

DM

(鈥?

P

tot

dv/dt(

1

)

V

ISO

T

s tg

T

j

(

*)

TO-220

TO-220FP

INTERNAL SCHEMATIC DIAGRAM

Parameter

Drain-source Voltage (V

GS

= 0)

Drain- gate Voltage (R

GS

= 20 k鈩?

Gate-source Voltage

Drain Current (continuous) at T

c

= 25 C

Drain Current (continuous) at T

c

= 100

o

C

Drain Current (pulsed)

T otal Dissipation at T

c

= 25 C

Derating Factor

Peak Diode Recovery voltage slope

Insulation Withstand Voltage (DC)

Storage Temperature

Max. Operating Junction T emperature

o

Value

STP7NB80

STP7NB80F P

800

鹵

30

6.5

4.1

26

135

1.08

4.5

--

-65 to 150

150

(

1

) I

SD

鈮?/div>

6.5A, di/dt

鈮?/div>

200 A/碌s, V

DD

鈮?/div>

V

(BR)DSS

, Tj

鈮?/div>

T

JMAX

Un it

V

6.5(*)

4.1(*)

26

40

0.32

4.5

2000

A

W

W/ C

V/ns

o

C

(鈥? Pulse width limited by safe operating area

Limited only maximum temperature allowed

April 1999

1/9

型號(hào)

版本

描述

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STP7NB80FP Datasheet

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