鈩?/div>
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
SURFACE-MOUNTING D
2
PAK (TO-263)
POWER PACKAGE IN TAPE & REEL
(SUFFIX 鈥淭4鈥?
3
1
TO-220FP
D
2
PAK
TO-263
(Suffix 鈥淭4鈥?
3
2
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET鈩?process has specifically been de-
signed to minimize input capacitance and gate charge. It
is therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended for
any applications with low gate drive requirements.
TO-220
1
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s
SOLENOID AND RELAY DRIVERS
s
DC MOTOR CONTROL
s
DC-DC CONVERTERS
s
AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
STB75NF75
STP75NF75
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
dv/dt
(1)
E
AS (2)
V
ISO
T
stg
T
j
due to Rth value
Value
STP75NF75FP
75
75
鹵 20
80
70
320
300
2.0
12
700
------
-55 to 175
2000
80(*)
70(*)
320(*)
45
0.3
Unit
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
Drain Current (continuous) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Insulation Withstand Voltage (DC)
Storage Temperature
Operating Junction Temperature
V
V
V
A
A
A
W
W/擄C
V/ns
mJ
V
擄C
(鈥?
Pulse width limited by safe operating area.
(*)
Refer to SOA for the max allowable current values on FP-type
June 2003
(1) I
SD
鈮?0A,
di/dt
鈮?00A/碌s,
V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 40A, V
DD
= 37.5V
1/11
NEW DATASHEET ACCORDING TO PCN DSG20023123 MARKING: P75NF75 @
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