鈩?/div>
100% AVALANCHE TESTED
LOW CAPACITANCE AND GATE CHARGE
175
o
C MAXIMUM JUNCTION
TEMPERATURE
1
3
2
DESCRIPTION
This fully clamped Mosfet is produced by using the latest
advanced Company鈥檚 Mesh Overlay process which is
based on a novel strip layout.
The inherent benefits of the new technology coupled with
the extra clamping capabilities make this product
particularly suitable for the harshest operation conditions
such as those encountered in the automotive
environment. Any other application requiring extra
ruggedness is also recommended.
TO-220
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
鈻?/div>
ABS, SOLENOID DRIVERS
鈻?/div>
POWER TOOLS
Ordering Information
SALES TYPE
STP62NS04Z
MARKING
P62NS04Z
PACKAGE
TO-220
PACKAGING
TUBE
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DG
V
GS
I
D
I
D
I
DG
I
GS
I
DM
(
鈥?
P
tot
dv/dt
(1)
E
AS (2)
V
ESD
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
Drain Current (continuous) at T
C
= 100擄C
Drain Gate Current (continuous)
Gate SourceCurrent (continuous)
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
ESD (HBM - C = 100pF, R=1.5 k
鈩?/div>
)
Storage Temperature
Operating Junction Temperature
Value
CLAMPED
CLAMPED
CLAMPED
62
37.5
鹵 50
鹵 50
248
110
0.74
8
500
8
-55 to 175
(1) I
SD
鈮?/div>
40A, di/dt
鈮?/div>
100A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 20A, V
DD
= 20V
Unit
V
V
V
A
A
mA
mA
A
W
W/擄C
V/ns
mJ
kV
擄C
(
鈥?
Pulse width limited by safe operating area.
March 2004
.
1/8
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