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STP60NF10 Datasheet

  • STP60NF10

  • N-CHANNEL 100V - 0.019ohm - 80A D2PAK/TO-220 STripFET II POW...

  • 10頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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N-CHANNEL 100V - 0.019
鈩?/div>
- 80A D虜PAK/TO-220
STripFET鈩?II POWER MOSFET
Table 1: General Features
TYPE
STB60NF10
STP60NF10
鈻?/div>
鈻?/div>
鈻?/div>
鈻?/div>
STB60NF10
STP60NF10
Figure 1:Package
R
DS(on)
I
D
80 A
80 A
V
DSS
100 V
100 V
< 0.023
鈩?/div>
< 0.023
鈩?/div>
TYPICAL R
DS
(on) = 0.019
鈩?/div>
EXTREMELY HIGHL dv/dt CAPABILITY
100% AVALANCHE TESTED
SURFACE-MOUNTING D虜PAK (TO-263)
POWER PACKAGE IN TAPE & REEL
(SUFFIX 鈥淭4")
3
1
3
1
2
D
2
PAK
TO-263
(Suffix 鈥淭4鈥?
TO-220
DESCRIPTION
This MOSFET series realized with STMicroelec-
tronics unique STripFET鈩?process has specifical-
ly been designed to minimize input capacitance
and gate charge. It is therefore suitable as primary
switch in advanced high-efficiency, high-frequency
isolated DC-DC converters for Telecom and Com-
puter applications. It is also intended for any appli-
cations with low gate drive requirements.
APPLICATIONS
鈻?/div>
HIGH EFFICIENCY DC/DC CONVERTERS,
INDUSTRIAL, AND LIGHTING EQUIPMENT.
鈻?/div>
MOTOR CONTROL
Figure 2: Internal Schematic Diagram
Table 2:
Ordering Information
SALES TYPE
STB60NF10T4
STP60NF10
MARKING
B60NF10
P60NF10
PACKAGE
TO-263
TO-220
PACKAGING
TAPE & REEL
TUBE
Table 3:ABSOLUTE
MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
(*)
I
D
I
DM
(鈥?
P
tot
dv/dt
(1)
E
AS (2)
T
stg
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
Drain Current (continuous) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
Value
100
100
鹵 20
80
66
320
300
2
16
485
-55 to 175
Unit
V
V
V
A
A
A
W
W/擄C
V/ns
mJ
擄C
(鈥?
Pulse width limited by safe operating area.
(**) Current Limited by Package
(1) I
SD
鈮?0A,
di/dt
鈮?00A/碌s,
V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 40A, V
DD
= 30V
May 2005
Rev.
2.0
1/10

STP60NF10 產(chǎn)品屬性

  • STP60NF10 View All Specifications

  • 50

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • STripFET™

  • MOSFET N 通道，金屬氧化物

  • 邏輯電平門

  • 100V

  • 80A

  • 23 毫歐 @ 40A，10V

  • 4V @ 250µA

  • 104nC @ 10V

  • 4270pF @ 25V

  • 300W

  • 通孔

  • TO-220-3

  • TO-220AB

  • 管件

  • 497-4384-5

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