鈩?/div>
LOW THRESHOLD DRIVE
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique 鈥漇ingle Feature
Size鈩⑩€?strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalance
characteristics and less critical alignment steps
therefore
a
remarkable
manufacturing
reproducibility.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC & DC-AC CONVERTERS
s
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc. )
3
1
2
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
E
AS( 1
)
T
s tg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
G ate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
T otal Dissipation at T
c
= 25
o
C
Derating Factor
Single Pulse Avalanche Energy
Storage Temperature
Max. Operating Junction Temperature
o
Value
30
30
鹵
20
60
42
240
100
0.67
650
-65 to 175
175
(
1
)
starting T
j
= 25 C, I
D
= 30A , V
DD
= 20V
o
Un it
V
V
V
A
A
A
W
W /
o
C
mJ
o
o
C
C
1/6
(鈥? Pulse width limited by safe operating area
September 1999