鈩?/div>
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
3
1
2
3
1
2
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique 鈥漇ingle Feature
Size鈩⑩€?strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s
SOLENOID AND RELAY DRIVERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC CONVERTERS
s
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
鈥?/div>
)
P
tot
V
ISO
dv/dt
T
s tg
T
j
May 1999
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
Total Dissipation at T
c
= 25 C
Derating F actor
Insulation Withstand Voltage (DC)
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
o
o
Value
STP60NE10
STP60NE10FP
100
100
鹵
20
60
42
240
160
1.06
錚?/div>
7
-65 to 175
175
(
1
) I
SD
鈮?/div>
60 A, di/dt
鈮?/div>
300 A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
Un it
V
V
30
21
120
50
0.37
2000
V
A
A
A
W
W /
o
C
V
V/ns
o
o
C
C
1/9
(鈥? Pulse width limited by safe operating area
STP60NE10 產(chǎn)品屬性
STMicroelectronics
MOSFET
N-Channel
100 V
+/- 20 V
60 A
0.022 Ohms
Single
+ 175 C
Through Hole
TO-220
Tube
45 ns
- 65 C
160 W
100 ns
50
STP60NE10相關(guān)型號(hào)PDF文件下載
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型號(hào)
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