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STP5NC50FP Datasheet

  • STP5NC50FP

  • N-CHANNEL 500V - 1.3ohm - 5.5A TO-220/FP/D2PAK/I2PAK PowerMe...

  • 535.49KB

  • 12頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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STP5NC50 - STP5NC50FP
STB5NC50 - STB5NC50-1
N-CHANNEL 500V - 1.3鈩?- 5.5A TO-220/FP/D
2
PAK/I
2
PAK
PowerMesh鈩I MOSFET
TYPE
STP5NC50
STP5NC50FP
STB5NC50
STB5NC50-1
s
s
s
s
s
V
DSS
500 V
500 V
500 V
500 V
R
DS(on)
< 1.5鈩?/div>
< 1.5鈩?/div>
< 1.5鈩?/div>
< 1.5鈩?/div>
I
D
5.5A
5.5A
5.5A
5.5A
3
1
TYPICAL R
DS
(on) = 1.3鈩?/div>
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED
TO-220
D
2
PAK
TO-220FP
3
12
DESCRIPTION
The PowerMESH
鈩?/div>
II is the evolution of the first
generation of MESH OVERLAY
鈩?
The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVES
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
I
2
PAK
INTERNAL SCHEMATIC DIAGRAM
Value
STP5NC50
STB5NC50/-1
STP5NC50FP
Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
( )
P
TOT
dv/dt(1)
V
ISO
T
j
T
stg
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuos) at T
C
= 25擄C
Drain Current (continuos) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Operating Junction Temperature
Storage Temperature
-
5.5
3.5
22
100
0.8
500
500
鹵30
5.5(*)
3.5(*)
22
35
0.28
3.5
2500
-55 to 175
-65 to 175
(*)Limited only by maximum temperature allowed
V
V
V
A
A
A
W
W/擄C
V/ns
V
擄C
擄C
(鈥?Pulse width limited by safe operating area
(1)I
SD
鈮?.5A,
di/dt
鈮?00A/碌s,
V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX.
December 2002
1/12

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