Using the latest high voltage MESH OVERLAY鈩?/div>
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company鈥檚
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
錕?frac12;
HIGH CURRENT, HIGH SPEED SWITCHING
錕?frac12;
SWITCH MODE POWER SUPPLIES (SMPS)
錕?frac12;
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symb ol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
dv/dt(
1
)
V
ISO
T
s tg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
G ate-source Voltage
Drain Current (continuous) at T
c
= 25 C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
T otal Dissipation at T
c
= 25 C
Derating Factor
Peak Diode Recovery voltage slope
Insulation W ithstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
o
o
o
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
Value
ST P5NB100
STP5NB100FP
1000
1000
鹵
30
5
3.1
15.2
135
1.08
4.5
錚?/div>
-65 to 150
150
(
1
) I
SD
鈮?/div>
5 A, di/dt
鈮?/div>
200 A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, Tj
鈮?/div>
T
JMAX
Unit
V
V
V
5(*)
3.1(*)
15.2
40
0.32
4.5
2000
A
A
A
W
W/
o
C
V/ns
V
o
o
C
C
(鈥? Pulse width limited by safe operating area
(*) Limited only by maximum temperature allowed
February 2000
1/9
STP5NB100 產品屬性
STMicroelectronics
MOSFET
N-Channel
1000 V
+/- 30 V
5 A
2.7 Ohms
Single
+ 150 C
Through Hole
TO-220
Tube
22 ns
1.5 S
- 65 C
135 W
11 ns
50
STP5NB100相關型號PDF文件下載
-
型號
版本
描述
廠商
下載
-
英文版
TRANSISTOR | BJT | NPN | 400V V(BR)CEO | TO-220AB
ETC
-
英文版
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | TO-218AA
ETC
-
英文版
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 3A I(C) | TO-218AA
ETC
-
英文版
TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 3A I(C) | TO-218AA
ETC
-
英文版
TRANSISTOR | BJT | NPN | 400V V(BR)CEO | TO-218AA
ETC
-
英文版
TRANSISTOR | BJT | NPN | 500V V(BR)CEO | TO-220AB
ETC
-
英文版
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
-
英文版
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STMICROELECTRON...
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 4.5A I(D) ...
ETC
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 5.6A I(D) ...
ETC
-
英文版
N-Channel enhancement mode power mos transistor
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5.5A I(D) ...
ETC
-
英文版
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
-
英文版
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
-
英文版
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STMICROELECTRON...
-
英文版
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
-
英文版
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STMicro
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 53A I(D) | ...
ETC
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 53A I(D) | ...
ETC
-
英文版
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STMICROELECTRONICS
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