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strip-based process. The resulting tran-
sistor shows extremely high packing density for
low on-resistance, rugged avalance characteris-
tics and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC & DC-AC CONVERTERS
s
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
1
D
2
PAK
3
12
I
2
PAK
INTERNAL SCHEMATIC DIAGRAM
Value
STP55NF06L
STB55NF06L/-1
STP55NF06LFP
60
60
鹵 16
55
39
220
95
0.63
20
300
-
鈥?55 to 175
2500
30
21
120
30
0.2
Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
l
)
P
TOT
dv/dt (2)
E
AS
(1)
V
ISO
T
stg
T
j
August 2002
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
Drain Current (continuous) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
V
V
V
A
A
A
W
W/擄C
V/ns
mJ
V
擄C
(
q
) Pulse width limited by safe operating area
(1) Starting T
j
=25擄C, I
D
=27.5A, V
DD
=30V
(2) I
SD