鈩?/div>
OPTIMIMIZED FOR HIGH SWITCHING
OPERATIONS
LOW GATE CHARGE
LOGIC LEVEL GATE DRIVE
1
2
3
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique 鈥淪ingle Feature
Size鈩?鈥?strip-based process. The resulting transis-
tor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
TO-220
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s
LOW VOLTAGE DC-DC CONVERTERS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
HIGH EFFICIENCY SWITCHING CIRCUITS
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuos) at T
C
= 25擄C
Drain Current (continuos) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Storage Temperature
Max. Operating Junction Temperature
Value
30
30
鹵15
55
39
220
80
0.53
鈥?0 to 175
175
Unit
V
V
V
A
A
A
W
W/擄C
擄C
擄C
(
鈥?/div>
)Pulse width limited by safe operating area.
February 2001
1/8
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